VBsemi Elec · FETs & Power MOSFETs · MPN SI4401DDY-T1-GE3-VB
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| Gate Charge(Qg) | 33nC@20V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 335pF |
| Current - Continuous Drain(Id) | 10.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF |
| RDS(on) | 10mΩ@10V;14mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.007nF |
| Type | P-Channel |
P-Channel 40V 10.2A 4W Surface Mount SO-8