VBsemi Elec · FETs & Power MOSFETs · MPN SI3552DV-T1-GE3-VB
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| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5.5A;3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.15W |
| RDS(on) | 22mΩ@10V;55mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 20V 5.5A 1.15W Surface Mount TSOP-6