VBsemi Elec · FETs & Power MOSFETs · MPN SI3499DV-T1-GE3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 5.1nC@10V |
| Current - Continuous Drain(Id) | 3.5A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 85mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| Input Capacitance(Ciss) | 950pF |
| Type | P-Channel |
P-Channel 60V 3.5A 3W Surface Mount TSOP-6