VBsemi Elec · FETs & Power MOSFETs · MPN SI3481DV-T1-GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10nC@10V;5.1nC@4.5V |
| Current - Continuous Drain(Id) | 4.8A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 49mΩ@10V;54mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 450pF |
| Type | P-Channel |
P-Channel 30V 4.8A 3W Surface Mount TSOP-6