VBsemi Elec · FETs & Power MOSFETs · MPN SI2328DS-VB
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| Gate Charge(Qg) | 2.9nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
N-Channel 100V 2A 1.6W Surface Mount SOT-23