VBsemi Elec · FETs & Power MOSFETs · MPN SI2325DS-T1-E3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 2nC@15V |
| Output Capacitance(Coss) | 23pF |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 240mW |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 3Ω@10V |
| Type | P-Channel |
P-Channel 60V 500mA 240mW Surface Mount SOT-23