VBsemi Elec SI2323DS-T1-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI2323DS-T1-E3-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)13nC@4.5V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)335pF
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
RDS(on)67mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds)240pF
Number1 P-Channel
Input Capacitance(Ciss)870pF
TypeP-Channel

Technical details

P-Channel 20V 5A 2W Surface Mount SOT-23-3

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