VBsemi Elec · FETs & Power MOSFETs · MPN SI2308DS-T1-GE3-VB
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| Gate Charge(Qg) | 4.2nC@10V;2.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.66W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 75mΩ@10V;86mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
| Type | N-Channel |
N-Channel 60V 4A 1.66W Surface Mount SOT-23(TO-236)