VBsemi Elec · FETs & Power MOSFETs · MPN SI2304DDS-T1-GE3-VB
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| Gate Charge(Qg) | 6.7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 33mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 335pF |
| Type | N-Channel |
30V 6.5A 2V 1.7W 33mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS