VBsemi Elec · FETs & Power MOSFETs · MPN SI2302DS-T1-GE3-VB
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| Gate Charge(Qg) | 8.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 22mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 865pF |
| Type | N-Channel |
N-Channel 20V 6A 1.3W Surface Mount SOT-23(TO-236)