VBsemi Elec SI2301CDS-T1-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI2301CDS-T1-E3-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)16nC@10V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)71mΩ@10V
Input Capacitance(Ciss)620pF
TypeP-Channel

Technical details

P-Channel 20V 3.5A 3W Surface Mount SOT-23-3

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