VBsemi Elec · FETs & Power MOSFETs · MPN SI1539CDL-T1-GE3-VB
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.25nC@4.5V;1.2nC@4.5V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3.28A;2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | 1.24W;1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 90mΩ@4.5V;155mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 20V 3.28A 1.24W Surface Mount SC-70-6