VBsemi Elec · FETs & Power MOSFETs · MPN SI1441EDH-T1-GE3-VB
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| Gate Charge(Qg) | 22nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 34mΩ@4.5V;45mΩ@3.5V;67mΩ@1.8V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 20V 4A 2.8W Surface Mount SC-70-6