VBsemi Elec SI1308EDL-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI1308EDL-VB

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Specifications

Gate Charge(Qg)8.8nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation2.8W
RDS(on)36mΩ@10V;40mΩ@4.5V;48mΩ@2.5V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 20V 4A 2.8W Surface Mount SOT-323(SC-70)

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