VBsemi Elec · FETs & Power MOSFETs · MPN SI1012R-T1-GE3-VB
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 4.1nC@10V |
| Output Capacitance(Coss) | 23pF |
| Current - Continuous Drain(Id) | 850mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 390mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 105pF |
| Type | N-Channel |
N-Channel 20V 0.85A 0.5W Surface Mount SC-75A