VBsemi Elec · FETs & Power MOSFETs · MPN RU20P4C-VB
No reviews yet — be the first to review VBsemi Elec RU20P4C-VB.
| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 5.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.295nF |
| Type | P-Channel |
P-Channel 30V 5.6A 1.6W Surface Mount SOT-23(TO-236)