VBsemi Elec RSS090P03-TB-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RSS090P03-TB-VB

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)11mΩ@10V;12mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.96nF
TypeP-Channel

Technical details

P-Channel 30V 10.5A 2.5W Surface Mount SO-8

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