VBsemi Elec RSS070P05TB-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RSS070P05TB-VB

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Specifications

Gate Charge(Qg)33nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)335pF
Current - Continuous Drain(Id)10.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)291pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.007nF
TypeP-Channel

Technical details

P-Channel 40V 10.2A 4W Surface Mount SO-8

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