VBsemi Elec RRH040P03TB-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RRH040P03TB-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16nC@10V
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
RDS(on)33mΩ@10V;43mΩ@6V;56mΩ@4.5V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 30V 5.8A 2.5W Surface Mount SO-8

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