VBsemi Elec RQA0009TXDQS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RQA0009TXDQS-VB

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Specifications

Output Capacitance(Coss)220pF
Pd - Power Dissipation6.3W
Configuration-
Gate Charge(Qg)22nC@10V;10nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)22mΩ@4.5V;30mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.2nF

Technical details

N-Channel 30V 6.8A 6.3W Surface Mount SOT-89

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