VBsemi Elec · FETs & Power MOSFETs · MPN RJE0605JPD-00-J3-VB
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.9nF |
P-Channel 60V 35A 2.3W Surface Mount TO-252