VBsemi Elec RFP30P06-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RFP30P06-VB

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation41.7W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)48mΩ
Number1 P-Channel
Input Capacitance(Ciss)2.065nF
Vgs±20V

Technical details

60V 45A 1V 41.7W 48mΩ 1 P-Channel P-Channel TO-220AB-3 Single FETs, MOSFETs RoHS

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