VBsemi Elec RFP30N06LE-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RFP30N06LE-VB

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Specifications

Configuration-
Gate Charge(Qg)66nC@5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

N-Channel 60V 50A Through Hole TO-220AB

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