VBsemi Elec RFD3055LE-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RFD3055LE-VB

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Specifications

Gate Charge(Qg)28nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)281pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)32mΩ@10V;37mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 60V 30A Through Hole TO-251

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