VBsemi Elec RE1J002YNTCL-VB

VBsemi Elec · FETs & Power MOSFETs · MPN RE1J002YNTCL-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)600pC@4.5V
Current - Continuous Drain(Id)330mA
Output Capacitance(Coss)6pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
RDS(on)1.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number1 N-channel
Input Capacitance(Ciss)30pF
TypeN-Channel

Technical details

N-Channel 60V 330mA 0.35W Surface Mount SC-75-3

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