VBsemi Elec · FETs & Power MOSFETs · MPN QS6K21TR-VB
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| Gate Charge(Qg) | 9nC@10V;4.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 58mΩ@10V;72mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 280pF |
| Type | N-Channel |
N-Channel 40V 3.6A 1W Surface Mount TSOP-6