VBsemi Elec QM6007D-VB

VBsemi Elec · FETs & Power MOSFETs · MPN QM6007D-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)72mΩ@4.5V;61mΩ@10V
Input Capacitance(Ciss)1nF
TypeP-Channel

Technical details

P-Channel 60V 30A Surface Mount TO-252

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