VBsemi Elec QM4004D-VB

VBsemi Elec · FETs & Power MOSFETs · MPN QM4004D-VB

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)85A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)6.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.38nF
TypeN-Channel

Technical details

N-Channel 40V 85A Surface Mount TO-252

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