VBsemi Elec QM4002AD-VB

VBsemi Elec · FETs & Power MOSFETs · MPN QM4002AD-VB

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Specifications

Gate Charge(Qg)42nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)725pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)570pF
RDS(on)12mΩ@10V;14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.801nF
TypeN-Channel

Technical details

N-Channel 40V 55A 3.75W Surface Mount TO-252

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