VBsemi Elec QM3015D-VB

VBsemi Elec · FETs & Power MOSFETs · MPN QM3015D-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)240nC@10V
Output Capacitance(Coss)1.565nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.75W
RDS(on)13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)715pF
Input Capacitance(Ciss)3.3nF
TypeP-Channel

Technical details

P-Channel 30V 60A 3.75W Surface Mount TO-252

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