VBsemi Elec QM3006M6-VB

VBsemi Elec · FETs & Power MOSFETs · MPN QM3006M6-VB

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Specifications

Gate Charge(Qg)71nC@10V;61.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.025nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V;2.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)3mΩ@10V;5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 30V 120A 35W Surface Mount DFN5x6-8

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