VBsemi Elec · FETs & Power MOSFETs · MPN PXN4R7-30QLJ-VB
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| Output Capacitance(Coss) | 406pF |
|---|---|
| Pd - Power Dissipation | 52W |
| Configuration | - |
| Gate Charge(Qg) | 33.5nC |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| RDS(on) | 4mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
52W 30V 1.5V 4mΩ@4.5V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS