VBsemi Elec · FETs & Power MOSFETs · MPN PSMN6R1-25MLD,115-VB
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| Output Capacitance(Coss) | 445pF |
|---|---|
| Pd - Power Dissipation | 31.2W |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Gate Charge(Qg) | 9.4nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| RDS(on) | 5.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
31.2W 20V 1.5V 5.5mΩ@4.5V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS