VBsemi Elec PSMN5R6-100XS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PSMN5R6-100XS-VB

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Specifications

Output Capacitance(Coss)3.07nF
Pd - Power Dissipation84W
Gate Charge(Qg)125nC
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)305pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.78nF

Technical details

84W 100V 3V 3.8mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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