VBsemi Elec PSMN4R3-80PS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PSMN4R3-80PS-VB

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Specifications

Output Capacitance(Coss)3.25nF
Pd - Power Dissipation370W
Configuration-
Gate Charge(Qg)94nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)348pF
Number1 N-channel
Input Capacitance(Ciss)6.71nF

Technical details

370W 80V 2V 4.8mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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