VBsemi Elec · FETs & Power MOSFETs · MPN PSMN3R7-100BSEJ-VB
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| Output Capacitance(Coss) | 3.07nF |
|---|---|
| Pd - Power Dissipation | 375W |
| Gate Charge(Qg) | 125nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.78nF |
375W 100V 3V 3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS