VBsemi Elec · FETs & Power MOSFETs · MPN PSMN3R3-80ES-VB
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| Output Capacitance(Coss) | 950pF |
|---|---|
| Pd - Power Dissipation | 62.5W |
| Configuration | - |
| Gate Charge(Qg) | 17.1nC |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 276pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8nF |
62.5W 80V 2V 6.5mΩ@10V 1 N-channel N-Channel TO-262 Single FETs, MOSFETs RoHS