VBsemi Elec · FETs & Power MOSFETs · MPN PSMN3R3-80BS,118-VB
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| Output Capacitance(Coss) | 3.25nF |
|---|---|
| Pd - Power Dissipation | 375W |
| Configuration | - |
| Gate Charge(Qg) | 94nC |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 348pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.91nF |
375W 80V 2V 5mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS