VBsemi Elec · FETs & Power MOSFETs · MPN PSMN2R4-30MLD115-VB
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| Output Capacitance(Coss) | 1.04nF |
|---|---|
| Pd - Power Dissipation | 52W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 22.5nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 79pF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.05nF |
52W 30V 1.1V 1.8mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS