VBsemi Elec · FETs & Power MOSFETs · MPN PSMN2R0-60ES-VB
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| Output Capacitance(Coss) | 1.725nF |
|---|---|
| Pd - Power Dissipation | 250W |
| Gate Charge(Qg) | 82nC |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| RDS(on) | 2.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.201nF |
250W 30V 1.5V 2.3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS