VBsemi Elec · FETs & Power MOSFETs · MPN PSMN1R2-30YLDX-VB
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| Output Capacitance(Coss) | 1.65nF |
|---|---|
| Pd - Power Dissipation | 375W |
| Configuration | - |
| Gate Charge(Qg) | 80nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 0.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
375W 40V 2V 0.7mΩ@10V 1 N-channel N-Channel LFPAK-56 Single FETs, MOSFETs RoHS