VBsemi Elec PSMN1R1-30PL,127-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PSMN1R1-30PL,127-VB

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Specifications

Output Capacitance(Coss)1.725nF
Pd - Power Dissipation250W
Configuration-
Gate Charge(Qg)171nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
RDS(on)2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)970pF
Number1 N-channel
Input Capacitance(Ciss)8.4nF

Technical details

250W 30V 1V 2mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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