VBsemi Elec PSMN017-30PL-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PSMN017-30PL-VB

No reviews yet — be the first to review VBsemi Elec PSMN017-30PL-VB.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V;25nC@4.5V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V;2.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)370pF
RDS(on)6mΩ@10V;9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

N-Channel 30V 80A 120W Through Hole TO-220AB

Related FETs & Power MOSFETs