VBsemi Elec PMV88ENEAR-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PMV88ENEAR-VB

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Specifications

Gate Charge(Qg)6.1nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)86mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel 60V 4A 1.8W Surface Mount SOT-23-3

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