VBsemi Elec · FETs & Power MOSFETs · MPN PMV60ENEAR-VB
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| Output Capacitance(Coss) | 79pF |
|---|---|
| Pd - Power Dissipation | 3W |
| Configuration | - |
| Gate Charge(Qg) | 8.7nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 442pF |
3W 40V 2V 35mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS