VBsemi Elec PMV30UN2R-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PMV30UN2R-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8.8nC@4.5V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)50mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)865pF
TypeN-Channel

Technical details

N-Channel 20V 6A 1.25W Surface Mount SOT-23-3

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