VBsemi Elec · FETs & Power MOSFETs · MPN PMT200EPEA115-VB
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| Output Capacitance(Coss) | 200pF |
|---|---|
| Pd - Power Dissipation | 10.4W |
| Gate Charge(Qg) | 30nC |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
10.4W 60V 1V 55mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS