VBsemi Elec · FETs & Power MOSFETs · MPN PMPB40SNA115-VB
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| Output Capacitance(Coss) | 165pF |
|---|---|
| Pd - Power Dissipation | 4.1W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 15nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| RDS(on) | 19mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
4.1W 60V 1.5V 19mΩ@10V 1 N-channel N-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS