VBsemi Elec · FETs & Power MOSFETs · MPN PMPB11EN,115-VB
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| Output Capacitance(Coss) | 126pF |
|---|---|
| Pd - Power Dissipation | 19W |
| Gate Charge(Qg) | 5nC |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| RDS(on) | 20mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 570pF |
19W 30V 1V 20mΩ@10V 1 N-channel N-Channel SC-70-6L Single FETs, MOSFETs RoHS