VBsemi Elec PMN30UNX-VB

VBsemi Elec · FETs & Power MOSFETs · MPN PMN30UNX-VB

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Specifications

Output Capacitance(Coss)100pF
Pd - Power Dissipation2.5W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)4.2nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
RDS(on)23mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)424pF

Technical details

2.5W 30V 1.5V 23mΩ@10V 1 N-channel N-Channel TSOP-6 Single FETs, MOSFETs RoHS

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